ID 原文 译文
12324 仿真结果表明，在 － 40 ～ 125 ℃，传感器的系统误差为 － 1. 4 ～2. 0 ℃，测温分辨率达到 0. 02 ℃ ; 在 1. 2～2. 6 V 电源电压内，传感器输出温度波动小于 0. 3 ℃ ；在 1. 2 V 电源电压下传感器电路 ( 不含控制逻辑及数字滤波器) 的功耗仅为 2. 4 μW。 The simulation results show that the system error is － 1. 4 － 2. 0 ℃ at － 40 ～ 125 ℃ with a temperaturemeasurement resolution of 0. 02 ℃ ． The maximum output temperature variation is less than 0. 3 ℃ at thesupply voltage range from 1. 2 V to 2. 6 V，and the power consumption of the sensor circuit ( excludingthe control logic and digital filter) is only 2. 4 μW at the supply voltage of 1. 2 V.
12325 AlGaInP 材料在 III-V 族化合物半导体中具有较高的带隙，是制备高效多结太阳电池中顶电池的理想材料之一。 AlGaInP is one of the most desirable III-V compound semiconductor materials for the fabrication of the top cell of high-efficiency multi-junction solar cells due to its high band gap．
12326 然而，在其金属有机气相外延 (MOVPE) 生长过程中的氧污染会形成深能级陷阱，这是影响材料质量的主要因素。 However，oxygen contamination in the metal organic vapor phase epitaxy (MOVPE) growth of AlGaInP materialmay result in the formation of deep-level traps，which is the main factor affecting the material quality．
12327 探讨了影响 AlGaInP 材料带隙的几种工艺参数，包括 Al 含量、衬底偏角和生长温度。 Several process parameters influencing the band gap of AlGaInP material are discussed，including aluminum content，substrate miscut angle and growth temperature．
12328 讨论了通过优化材料外延生长工艺和改进太阳电池结构，获得高质量 AlGaInP 子电池的几种技术途径，包括提高生长温度、生长速率和磷烷体积流量，以及采用 Se 作为发射区的 n 型掺杂剂和 GaInP /AlGaInP 异质结构。 Several technical approaches for optimizing epitaxial growth parameters of the material and solar cell structures to obtain high quality AlGaInP subcells are discussed，including increasing growth temperature，growth rate and phosphine volume flow，and using Se as the n-type dopant in the emitter region and GaInP /AlGaInP hetero-structures．
12329 介绍了近年来 AlGaInP 材料在高效多结太阳电池领域的研究进展，包括正向晶格失配太阳电池、反向晶格失配太阳电池和半导体直接键合太阳电池，并对其未来的发展趋势进行了展望。 The recent research progress of AlGaInP material applied in the field of high-efficiency multi-junction solar cells isintroduced，including upright metamorphic solar cells，inverted metamorphic solar cells and direct semiconductor bonded multi-junction solar cells． Besides，its future development trend is proposed．
12330 基于有源相控阵雷达的应用，设计了一款四通道的发射芯片，适用于发射 1. 2 ～1. 4 GHz的射频信号。 Based on the application of the active phased array radar，a four-channel transmitter chipwas designed for transmitting 1. 2－1. 4 GHz ＲF signals．
12331 电路设计采用直接上变频的结构，将低频的基带信号转换为射频信号。 A direct up-conversion structure was used to convert the low-frequency baseband signal to ＲF signal．
12332 针对直接上变频输出谐波多和输出功率低的问题，采用高阶滤波器、窄带选频网络的双平衡混频器和多级可调电压增益放大器 (VGA) 并联形式的驱动放大器等技术，降低了输出谐波的幅度并提高输出功率。 For the problems of much direct up-conversionoutput harmonic and low output power，some techniques such as high-order filters，double-balancedmixers with narrow-band frequency-selective networks and driving amplifiers in parallel with multilevel adjustable voltage gain amplifier (VGA) were used to reduce the amplitude of the output harmonic andincrease output power．
12333 电路采用 SMIC 0. 13 μm CMOS 工艺进行了设计仿真和流片，芯片面积 为3. 6 mm×3. 4 mm。 The circuit was designed，simulated and fabricated based on the SMIC 0. 13 μmCMOS process with a chip area of 3. 6 mm×3. 4 mm．