ID 原文 译文
12314 该电路实现了对起动机启动过程的实时监测，确保了起动机的正常启动及发生故障时的快速响应，并增加了过温、欠压等保护功能，提高了电子继电器工作的可靠性。 The circuit realized thereal-time monitoring of the starter during the starting process and ensured the normal start-up of the starterand the quick response when the fault occurs. The circuit added the protection functions such as over-temperature，under-voltage，etc．，and improved the reliability of the electronic relay.
12315 芯片面积为 2. 24 mm2。 And the chip area is2. 24 mm2
12316 基于 InP 双异质结双极晶体管 ( DHBT) 工艺设计并实现了一款 6 bit 高速数模转换器( DAC) 芯片，该 InP 工艺 DHBT 器件的电流增益截止频率大于 200 GHz，最高振荡频率大于285 GHz。 A high-speed 6 bit digital-to-analog converter ( DAC ) chip was designed andimplemented based on the InP double heterojunction bipolar transistor ( DHBT) technology. The currentgain cut-off frequency of the DHBT is more than 200 GHz and the maximum oscillation frequency is morethan 285 GHz．
12317 DAC 芯片采用 Ｒ-2Ｒ 梯形电阻电流舵结构，输入级采用缓冲预放大器结构，实现输入缓冲及足够高的增益；D 触发器单元采用采样/保持两级锁存拓扑结构实现接收数据的时钟同步；采用开关电流源单元及 Ｒ-2Ｒ 电阻单元，减小芯片体积，实现高速采样。 A Ｒ-2Ｒ ladder resistor current-steering structure was adopted in this DAC chip，and apre-amplifier structure was used in the input-stage to achieve the input buffer and get a high enough gain．A sample-hold latch topological structure was used to get the clock synchronization with input data in theD flip-flop cell，while a switch-current source cell and a Ｒ-2Ｒ resistor cell were designed to reduce thechip size and get high-speed sample rate.
12318 该 DAC 最终尺寸为4. 5 mm×3. 5 mm，功耗为3. 5 W。 The size of the final chip is 4. 5 mm×3. 5 mm，and the powerconsumption is 3. 5 W.
12319 实测结果表明，该 DAC 可以很好地实现 10 GHz 采样时钟下的斜坡输出，微分非线性为+0. 4 / －0. 24 LSB，积分非线性为+0. 61 / －0. 64 LSB。 The test results show that the DAC can achieve good ramp-wave output at 10 GHzsampling clock，and the differential and integral non-linearities are + 0. 4 / － 0. 24 LSB and + 0. 61 /－0. 64 LSB，respectively．
12320 设计了一种适用于无源超高频 ( UHF) 温度标签的超低功耗 CMOS 温度传感器电路。 An ultra-low power CMOS temperature sensor circuit for the passive ultra-high frequency( UHF) temperature tag was designed．
12321 该电路利用衬底 pnp 晶体管产生随温度变化的电压信号，同时采用了逐次逼近寄存器 ( SAＲ) 转换和 Σ-Δ 调制相结合的模拟数字转换方式。 The temperature-dependent voltage signals were generated basedon the substrate pnp transistor，and the analog-digital conversion method which combined successive approximation register ( SAＲ) conversion and Σ-Δ modulation was used in the circuit．
12322 为了降低电源电压波动以及采样电容电荷泄漏对传感器测温精度的不利影响，提出了一种具有漏电保护机制的采样电路。 In order to reducethe negative effects of the supply voltage variation and charge leakage of the sampling capacitors on thetemperature measurement accuracy of the temperature sensor，a sampling circuit with leakage protectionmechanism was proposed．
12323 基于 0. 18 μm CMOS 工艺设计实现了该传感器的电路和版图，其中版图面积为 550 μm×450 μm，并利用 Cadence Spectre仿真工具对电路进行了仿真。 The sensor circuit and layout were designed and realized based on 0. 18 μmCMOS process，which was also simulated by Cadence Spectre． The layout area is 550 μm×450 μm．