ID 原文 译文
12294 结果表明，Al2O3 薄膜的生长速率和折射率随沉积功率的增加分别呈现先增加后下降和不断增加的趋势，当沉积功率为 1 800 W 时，薄膜的线性生长速率达到0. 27 nm /cycle，远高于传统热原子层沉积技术的沉积速率。 The results show that the growth rate of Al2O3 films increases first and then decreases，while the refractive index keeps increasing with the increasing deposition power． When the depositionpower was 1 800 W，the linear growth rate reached 0. 27 nm /cycle，which was much higher than that ofthe film prepared by thermal atomic layer deposition system.
12295 退火处理不会改变 Al2O3 薄膜晶态，但改善了薄膜的表面粗糙度，降低了接触角和有机基团红外强度。 Besides, after the annealing process thecrystalline state of the Al2O3 films couldn't be changed, but the surface roughness was improved．And the contact angle and the infrared intensity of the organic group decreased after annealing process．
12296 得到了最佳的 PE-ALD 薄膜制备工艺条件，实现了对有机发光二极管器件的有效封装。 The optimum preparation conditions of PE-ALD thin films were obtained，and the effective packaging of organiclight emitting diodes was realized．
12297 为制备用于 X 射线闪烁屏的高开口面积比硅微通道阵列，研究了四甲基氢氧化铵( TMAH) 溶液温度和质量分数对硅 ( 100) 晶面和 ( 110) 晶面腐蚀速率的影响。 In order to fabricate a high open area ratio silicon microchannel array used in the X-rayscintillation screen，the effects of the temperature and mass fraction of tetramethylammonium hydroxide( TMAH) solution on the etching rates of the ( 100) and ( 110) crystal planes of the silicon were studied．
12298 通过金相显微镜观测硅微通道端面尺寸并计算腐蚀速率，分析了硅 ( 100) 晶面和 ( 110) 晶面腐蚀速率比对硅微通道阵列孔形的影响，探讨了 TMAH 溶液温度和质量分数与硅微通道阵列开口面积比的关系。 The sectional dimension of the silicon microchannel array was measured by a metallographic microscopeand the etching rate of the silicon was calculated． The effects of the etching rate ratio of the ( 100) and( 110) crystal planes of silicon on the pore shape of the silicon microchannel array were analyzed． The relationships of the temperature and mass fraction of TMAH solution with the open area ratio of the siliconmicrochannel array were discussed．
12299 研究表明，硅 ( 100) 晶面和 ( 110) 晶面的腐蚀速率比是影响硅微通道阵列开口面积比的主要因素。 The results show that the etching rate ratios of the ( 100) and ( 110)crystal planes of silicon are the fundamental factors of the open area ratio of the silicon microchannel array．
12300 当硅 ( 100) 晶面与 ( 110) 晶面腐蚀速率比大于槡2 时，得到具有高开口面积比的正方形硅微通道阵列。 A square-pore with high open area ratio was obtained，when the etching rate ratio of the the ( 100)and ( 110) crystal planes of silicon was greater than 槡2 ．
12301 使用质量分数为 1%的 TMAH 溶液在 40 ℃ 的溶液温度下，制备出开口面积比大于 81%的正方形硅微通道阵列。 The square-pore silicon microchannel array withan open area ratio of greater than 81% was prepared using the TMAH solution with a mass fraction of 1%at a solution temperature of 40 ℃.
12302 通过高温填充 CsI ( Tl) 制备出基于硅微通道的 X 射线闪烁屏，X 射线成像结果表明通道整形技术有助于提高闪烁屏的性能。 X-ray scintillation screens based on silicon microchannels were prepared by filling CsI ( Tl) at a high temperature． The X-ray imaging results show that the silicon microchannel shaping technology helps to improve the performance of scintillation screens．
12303 提出并研究了一种具有阶梯变掺杂基区的 SiC 光控晶体管。 The SiC optically controlled transistor with step-shaped gradually doped base was proposed and studied.