ID 原文 译文
12284 以高纯 Ga2O3 为原料，使用自主设计的单晶生长炉，采用导模 ( EFG) 法生长了 2 英寸 ( 1 英寸= 2. 54 cm) 未掺杂的高质量 β-Ga2O3 单晶。 The 2-inch ( 1 inch = 2. 54 cm) undoped high-quality β-Ga2O3 single crystal were prepared in a self-designed single-crystal growth furnace with edge-defined film-fed growth ( EFG) methodusing high-purity Ga2O3 as the raw material．
12285 研究了保护气氛对抑制 Ga2O3 原料高温分解速率的影响，对制备的 β-Ga2O3 单晶的晶体质量、位错和光学性能进行了测试和表征。 The effect of protective atmosphere on the decomposition rateof Ga2O3 raw material at high temperature was studied. The crystal quality，dislocation and optical properties of the prepared β-Ga2O3 single crystal were measured and characterized．
12286 结果表明，CO2 保护气氛能够极大地抑制 Ga2O3 材料的高温分解，当 CO2 生长气压为 1. 5×105 Pa 时，Ga2O3 的平均分解速率低于 1 g / h。 The results show that theCO2 protective atmosphere can greatly inhibit the decomposition of Ga2O3 materials at high temperature．When the growth pressure of CO2 is 1. 5×105 Pa，the average decomposition rate of Ga2O3 is less than1 g / h．
12287 (100) 面 β-Ga2O3 单晶的 X 射线衍射 ( XＲD) 摇摆曲线测试结果表明，其半高宽低至 29 arcsec，表明晶体具有较高的质量; 对晶体 ( 100) 面进行了位错腐蚀，结果显示其位错密度较低，约为 4. 9 × 104 cm－2; 傅里叶变换红外光谱仪测试结果显示，β-Ga2O3单晶在紫外、可见光透过率达到 80%以上。 The X-ray diffraction ( XＲD) rocking test results of β-Ga2O3 single crystal ( 100) crystal planeshow that the full width at half maximum ( FWHM) is as lower as 29 arcsec，which indicates the highquality of the as-grown crystal． The dislocation density of the sample is lower，which is about 4. 9 ×104 cm－2 by measuring the dislocation on ( 100) crystal plane． In addition，the test results of the Fouriertransform infrared spectrometer indicate that the transmittances of β-Ga2O3 single crystal through both UVand visible light are above 80%．
12288 利用有限元法对单片 6 英 寸 ( 1 英 寸 = 2. 54 cm) GaN 衬底用氢化物气相外延( HVPE) 生长系统的工艺参数进行了数值模拟和优化。 The process parameters of hydride vapor phase epitaxy ( HVPE) growth system for a single-chip 6-inch ( 1 inch = 2. 54 cm) GaN substrate were numerical simulated and optimized by using thefinite element method．
12289 通过建立反应室二维几何模型，依次改变 HVPE 系统中的 GaCl，NH3 和分隔气 ( N2 ) 流速等主要参数进行数值模拟，研究分析了反应室内各反应物的浓度分布和衬底上 GaN 的生长速率变化，同时考虑了涡旋分布以及 GaCl 出口管壁上寄生沉积等对衬底上 GaN 生长的影响，并给出了 HVPE 系统高速率均匀生长 GaN 的优化参数。 By establishing the two-dimensional geometry model，the numerical simulation wascarried out by in turn changing the important parameters，such as the flow rate of GaCl，NH3 and separation gas ( N2 ) ，etc． The concentration distribution of various reactants and the growth rate of GaN on thesubstrate were researched and analyzed． Meanwhile，the effects of the vortex distribution and parasiticdeposition on the exit wall of GaCl on the growth of GaN on the substrate were also considered． And theoptimization parameters were obtained for the growth of GaN with high growth rate and high thickness uniformity in HVPE systems．
12290 模拟分析还表明，适当降低 HVPE 反应室内的压强可以改善衬底上 GaN 生长的均匀性。 The simulation analysis also shows that the growth uniformity of GaN on thesubstrate can be improved by reducing the pressure appropriately in the HVPE reaction chamber
12291 Al2O3 薄膜常用于有机电子器件的稳定化封装。 Al2O3 films are widely used in the stable packaging of organic electronic devices．
12292 除了薄膜的水气渗透率特性，薄膜的表面粗糙度、润湿性和折射率等性能也会影响薄膜的最终封装效果。 Besides the characteristic of water vapor transmission rate，the surface roughness，wettability and refractive indexof the film also affect the final encapsulation result of the films．
12293 采用自制等离子增强原子层沉积 ( PE-ALD) 系统在低温下成功制备了 Al2O3 薄膜，研究了沉积功率和退火参数对 Al2O3 薄膜微观形貌和性能的影响。 The Al2O3 films were successfully prepared by self-made plasma enhanced atomic layer deposition ( PE-ALD) system at low temperature． The effects of deposition power and annealing parameters on the microtopography and properties of the Al2O3 films were studied.