| ID | 原文 | 译文 |
| 12264 | 芯材横截面组织为等轴晶，晶粒细小弥散且内部有大量的板条状平行的退火挛晶。 | The interfacial bonding force between composite layer and core is good. The cross-section structure of the core material is equiaxed grain. The grain is fine and dispersed with a large number of parallel annealing twins in strip shape inside. |
| 12265 | 金包银复合键合丝具有较高的抗拉强度(230 MPa) 和延伸率(15%)，其强化机制为界面强化和细晶强化，其电性能受表面/界面以及晶界散射的 影响而变差。 | The breaking strength (230 MPa) and elongation (15%) of the gold-coated silver composite bonding wire are high. Its strengthening mechanism is interface strengthening and fine-grain strengthening， and its electrical properties are degraded by surface / interface and grain boundary scattering. |
| 12266 | 金包银复合键合线弧形稳定，具有较高的键合可靠性，其挑断カ(7.79g)与焊球推力(49.7g)均满足微电子封装技术对键合丝的品质要求。 | The gold-coated silver composite bonding wire has stable arc shape with high bonding reliability. The wire pulling force ( 7. 79g) and solder ball thrust force ( 49. 7g) can meet the quality requirement of the bonding wire for microelectronic packaging technology. |
| 12267 | 90 nm节点及以下的芯片在回流组装中，材料热失配引起的凸点剪切易导致低介电常数(k)布线介质层中发生断裂失效，即芯片封装交互影响问题。 | In the reflow assembly of chips with 90 nm node and below， the low dielectric constant (k) layer in back end of line (BEOL) is prone to crack and failure due to bump shear caused by material thermal mismatch，that is the chip packaging interaction problem. |
| 12268 | 通过单个凸点的剪切试验，结合凸点下方的布线层失效分析，评估芯片布线层可靠性； | A shear test for a single bump and a followed failure analysis of the wiring layer under bumps were performed to evaluate the reliability of the chip wiring layer. |
| 12269 | 并采用有限元分析方法对一款40nm节点芯片的凸点进行剪切模拟，用子模型分析了凸点受剪切时，布线层中微裂纹的裂尖能量释放率(ERR)随剪切高度、剪切力和微裂纹长度的变化。 | The bump shear of a chip with 40 nm node was simulated by finite element analysis method. And a sub—model was applied to analyze the changes of the energy release rate (ERR) at crack tips of the microcracks in the wiring layer with shear height，shear force and microcrack length when the bumps were sheared. |
| 12270 | 研究结果表明：模拟与试验结果相符，裂尖ERR随剪切高度、剪切カ、微裂纹长度的增加而升高，降低凸点剪切高度有利于减小低k材料断裂的可能性。 | The research results show that the simulation results are consistent with the experimental results. The ERR at crack tips increases with the increase of shear height，shear force and microcrack length. Decreasing the shear height of bumps is helpful to reduce the possibility of low-k materials fracture. |
| 12271 | 在集成电路28 nm和14 nm等先进制造工艺开发中，采用纳米探针锁定失配器件后, 依然无法通过物性分析找出失效原因，成为提升低压良率的最大瓶颈。 | In the development of advanced processes such as integrated circuits 28 nm and 14 nm technology, after using nano-probes to lock mismatched devices, it is still impossible to find the failure cause through physical property analysis, which becomes the biggest bottleneck for low-voltage yield improvement. |
| 12272 | 通过对存储失效单元器件特性的分析提出了失效模型,采用计算机辅助设计技术（TCAD）工具对器件失配进行模拟,给 出失效现象的直观解释和工艺改善方向并优化了工艺条件。 | A failure model was proposed by analyzing the characteristics of the failure storage unit. The TCAD tool was used to simulate the device mismatch, and the visual interpretation, process improvement direction and specific optimization process conditions were given. |
| 12273 | 结果表明在常规器件分析流程中引入TCAD器件模拟是ー种更有效的研究低压良率器件局域失配的方法,能大大缩短工艺开发周期。 | The results show that applying the TCAD simulation in traditional device analysis flow is an effective method to study the local mismatch of low-voltage yield devices, which can greatly shorten the process development cycle. |