ID 原文 译文
12254 InGaN/ AlGaN近紫外LED的光电性能与AlN成核层厚度密切相关，最佳AlN成核层厚度为50.22 nm。 The photoelectric properties of InGaN/AlGaN near-UV LEDs are closely related to the AlN nucleation layer thickness, and the best AlN nucleation layer thickness is 50.22 nm.
12255 智能剥离技术是制备绝缘体上错(GeOI)衬底的常用方法。 The smart-cut technique is a common method for preparing germanium-on^nsulator (GeOI) substrate.
12256 然而，由于错与硅之间的热膨胀系数相差较大，硅错键合界面较大的热应力カ可能导致键合对裂片或者解键合。 However， due to the large thermal expansion coefficient between germanium and silicon， the large thermal stress on the silicon-germanium bonding interface may result in the crack or debonding of the bonding pair.
12257 通过对硅错异质键合对的热应力问题进行理论分析，建立了硅错双平板热应力模型。 Based on the theoretical analysis of the thermal stress problems of silicongermanium heterogeneous bonding pairs，a silicon germanium bi-layer thermal stress model was established.
12258 提出4种抑制热应力的实验方案，并得出优化退火条件是解决热应力问题最有效的办法。 Four experimental schemes for suppressing thermal stress were proposed， and it is concluded that the optimization of annealing conditions is the most effective way to solve the thermal stress problem.
12259 采用智能剥离技术在优化退火条件下成功制备了 4英寸(1英寸= 2.54 cm)晶圆级GeOI衬底，转移的错薄膜厚度偏差小于 2%，均方根表面粗糙度低至0.42 nm， 喇曼光谱显示转移的错薄膜内残余应力较小，制备的 GeOI衬底可以为后续高迁移率器件制备或硅基(-V族异质集成提供材料平台。 The 4-inch ( # inch = 2. 54 cm) wafer-scale GeOI substrate was successfully prepared by using smart-cut technique at optimized annealing conditions. The thickness deviation of the transferred germanium film is less than 2%，the root-mean-square surface roughness can be reduced to 0. 42 nm，and the Raman spectrum shows that the residual stress in the transferred germanium film is small. The prepared GeOI substrate can provide a material platform for subsequent high-mobility device fabrication or Si based (-V heterogeneous integration.
12260 采用微波等离子体化学气相沉积(MPCVD)法同质生长了边缘无多晶聚集的金刚石， 详细研究了其表面与侧面的生长情况％利用微分干涉相差显微镜和喇曼光谱仪对边缘无多晶的单晶金刚石进行了表征，结果表明，通过优化侧面温度的控制可以实现4个侧面呈单晶生长，生长结束后金刚石尺寸由原始的3.50 mmX3. 50 mm扩展到4.50 mmX4. 52 mm，并且侧面扩展部分与 表面区域的喇曼特征峰半高宽均在2.2〜2.4 cm1I附近，呈现出较高的结晶质量，而光致发光光谱测试结果表明，晶体内部有氮和硅杂质存在。 Single crystal diamond without any polycrystal on the lateral faces was successfully grown on a homogeneous diamond seed by microwave plasma chemical vapor deposition ( MPCVD) method，and the morphological evolution on the surface and lateral faces of the as-grown diamond was carefully investigated. The single crystal diamond without any polycrystal on the lateral faces was characterized by differential interference contrast microscope and Raman spectrometers. The results show that by optimizing the control of temperature，the growth of single crystal diamond was realized on the four lateral faces and the size of the as-grown diamond was increased from originally 3. 50 mmX 3. 50 mm to 4. 50 mm X 4. 52 mm after growth. The full width at half maximum (1 WHMs) of Raman characteristic peaks on four lateral enlarged faces and the top surface are approximately 2. 2-2. 4 cm-1，indicating a superior crystalline quality of diamond. However，photoluminescence spectra test result demonstrates the existence of nitrogen and silicon impurities in the as-grown diamond.
12261 对于金刚石同质生长而言，金刚石4个侧面同时生长将会提高单晶生长效率和金刚石单片尺寸。 For diamond homogeneous growth， simultaneous growth of the four lateral faces of the diamond will increase single crystal diamond growth efficiency and size of the diamond chip.
12262 采用固相复合及大塑性拉拔技术制备了线径0.020 mm的金包银复合键合丝，并利用扫描电子显微镜、双束电子显微镜、单轴拉伸实验、电阻率实验、键合实验、线弧挑断实验及焊球推力实验等对其微结构和性能进行表征。 The gold-coated silver composite bonding wire with a wire diameter of 0. 020 mm was prepared by solid-phase composition and severe plastic deformation technology. And its microstructure and property were characterized by scanning electron microscope， double beam electron microscope，uniaxial tensile test，resistivity test，bonding test，wire pulling force test and solder ball thrust force test，etc.
12263 结果表明：金包银复合键合丝的复层达到纳米级尺度，在芯材表面均匀连续覆盖，与芯材的界面结合力好。 The results show that the composite layer of the gold-coated silver composite bonding wire reaches nanometer scale，and covers the core material surface uniformly and continuously.