ID 原文 译文
12244 分析了界面态对硅无结纳米线晶体管(JNT)亚阈值摆幅和电导率的影响,并详细总结了化学钝化硅纳米线界面态的方法以及对器件性能的影响。 The influences of interface states on the subthreshold swing and conductivity of silicon junctionless nanowire transistors (JNTs) were analyzed. The chemical passivation methods of interface states of silicon nanowires and the influence on the device performance were summarized in detail.
12245 化学钝化方法主要包括各向同性的 氢氟酸(HF)腐蚀钝化和各向异性的四甲基氢氧化铵(TMAH)腐蚀钝化。 The chemical passivation methods mainly include the hydrofluoric acid ( HF ) isotropic etching and tetramethyl-ammonium-hydroxide (TMAH) anisotropic etching.
12246 HF钝化方法以氢饱 和硅表面悬挂键来减少其表面界面态，TMAH钝化方法则通过各向异性腐蚀形成Si—O键。 The HF passivation method can saturate the dangling bonds of the silicon surface with hydrogen to reduce its surface interface states. The TMAH passivation method can form Si——O bonds by anisotropic etching.
12247 化学处理后得到了光滑的硅纳米线晶面表面结构，从而有效地抑制界面态对电导率的影响,使器件达 到理想的亚阈值摆幅。 After chemical treatment, the smooth silicon nanowire crystal surface structure was obtained, thus effectively inhibiting the influence of interface states on the conductivity, so that the device reached an ideal subthreshold swing.
12248 研究结果表明，利用化学腐蚀钝化方法优化界面态，能够有效改善硅纳米线晶体管的性能。 Research results show that the interface state optimization by chemical etching passivation method can effectively improve the performance of silicon nanowire transistors.
12249 在图形化蓝宝石衬底上制备了 InGaN/AlGaN近紫外发光二极管(LED) 〇采用金属有机化学气相沉积(MOCVD)方法外延生长了不同厚度的AlN成核层，系统研究了AlN成核层厚 度对外延层质量和InGaN/AlGaN近紫外LED (波长395 nm)光电性能的影响。 InGaN/AlGaN near-ultraviolet (UV) light-emitting diodes (LEDs) were grown on patterned sapphire substrate. The AlN nucleation layers of different thicknesses were grown by the metal organic chemical vapor deposition (MOCVD) method. The effects of the thickness of AlN nucleation layer on the quality of the epitaxial layer and the photoelectric properties of InGaN / AlGaN near-UV LEDs (with a wavelength of 395 nm) were investigated systematically.
12250 使用透射电子显微镜对外延层的截面结构及位错进行表征。 The cross-section structure and dislocation of the epitaxial layer were characterized by the transmission electron microscope.
12251 结果表明，随着AlN成核层厚度的增加，位错密度 不断减小，且量子阱表面V形坑尺寸逐渐减小。 The results show that the dislocation density and the size of the V-shaped pit on the quantum well surface decrease with the increase of AlN nucleation layer thickness.
12252 LED器件的光学性能和电学性能随着V形坑尺寸的减小而提高，归一化外量子效率最大值由0.55增至1;在电流350 mA时，正向电压从 3.54 V降至3.45 V，又升高至3.60 V。 The optical and electrical properties of LED devices are improved with the decrease of the V-shaped pit size， and the maximum value of the normalized external quantum efficiency increases from 0. 55 to 1. The forward voltage at 350 mA drops from 3. 54 V to 3. 45 V initially，and then rises to 3. 60 V.
12253 当AlN成核层厚度超过临界值后，位错密度不降反升， 量子阱表面的V形坑密度增加，导致量子阱的有效发光面积减小，外延层质量下降。 When the thickness of the AlN nucleation layer exceeds the critical value，the dislocation density and the V-shaped pit density on the quantum well surface increase，which leads to a decrease of the effective luminescence area and a decrease in the quality of the epitaxial layer.