ID 原文 译文
12234 采用高温加速老化试验对器件的可靠性进行了评估，试验器件在3 150 h内未发生失效,功率缓慢 退化速率为5x10i6 h"1。 The reliability of the device was evaluated by the high temperature accelerated aging test，the test devices have no failure within 3 150 h and the degradation rate of the power is 5x10-6 h-1.
12235 通过在碱性硅溶胶中添加不同的芬顿试剂配制成不同的硅溶胶抛光液,检测其Zeta 电位绝对值的大小,研究不同芬顿反应试剂对硅溶胶稳定性的影响，进而探究其稳定性对SiC化 学机械抛光的影响。 By adding different Fenton reagents in the alkaline colloidal silica to prepare different colloidal silica polishing solutions，the absolute value of Zeta potential was detected，the effect of different Fenton reaction reagents on the stability of the colloidal silica was studied，and the effect of its stability on SiC chemical mechanical polishing was investigated.
12236 实验结果表明，原硅溶胶和加入H)O)的硅溶胶抛光液Zeta电位绝对值分别 为45和55.5 mV，稳定性好，抛光后的SiC表面形貌也最好，表面粗糙度分别达到0.500 6和 0.464 2 nm; The experimental results show that the Zeta potential absolute values of the original colloidal silica and colloidal silica polishing solution containing H2 O2 are 45 and 55. 5 mV，respectively，indicating the good stability. Besides，the polished SiC has the best surface morphology，and the surface roughness reach 0. 500 6 and 0. 464 2 nm，respectively.
12237 而基于芬顿反应的硅溶胶抛光液Zeta电位绝对值为9.88 mV,稳定性极差，抛光后 的SiC表面出现大量划痕并伴有晶体剥落，表面粗糙度达到3.666 4 nm。 However，the absolute value of Zeta potential of the colloidal silica polishing solution based on Fenton reaction is 9. 88 mV with poor stability. The polished SiC surface has many deep scratches and crystals spalling，and the surface roughness is 3. 666 4 nm.
12238 采用滴涂法将C^ZnSnS" (CZTS)纳米墨水制成薄膜，研究了退火工艺对薄膜性能的影响。 The C^ZnSnS" (CZTS) nano-ink was used to prepare the thin film by drop-coating method， and the influence of the annealing process on properties of the thin film was studied.
12239 首先，采用乙醇作为溶剂、三乙醇胺作为分散剂，将微波液相合成的水性CZTS纳米颗粒 配成纳米墨水，并采用滴涂法将纳米墨水制成CZTS薄膜。 Firstly，the hydrophilic CZTS nanoparticles synthesized by the microwave liquid phase were formulated into nano^nk by using ethanol as the solvent and triethanolamine as the dispersant. Then the nano-ink was used to prepare CZTS thin film by drop-coating method.
12240 其次，为了提高薄膜的结晶性，将制备的CZTS薄膜在氮气气氛下进行退火处理，研究了退火温度与退火时间对薄膜形貌、成分及物 相结构的影响。 In order to improve crystallinity of the as-synthesised CZTS thin film，the CZTS thin film was annealed in nitrogen atmosphere，and the influences of annealing temperature and annealing time on the morphology，composition and phase structure of the thin film were investigated.
12241 研究结果表明，随着退火时间的延长，薄膜中的C+2一・S杂相逐渐消失，薄膜的结晶性和致密性逐渐提高; The research results show that the Cu)一,S impurity phase in the thin film gradually disappears， and crystallinity and compactness of the thin film are improved with the increase of the annealing time.
12242 随着退火温度的增加，薄膜的结晶性与致密性也有所提高。 Moreover， crystallinity and compactness of the thin film are also improved with the increase of the annealing temperature.
12243 在500℃下退火30 min，所制备的CZTS薄膜不存在杂质相，且表面较为均匀致密。 The as-synthesised CZTS thin film has no impurity phase when being annealed at 500 °C for 30 min，and the surface is uniform and compact.