ID 原文 译文
12224 基于90 nm eFLASHエ艺设计并制备了一种新型抗辐照Push-Pul!型pFLASH开关单 元，并对其特性进行了研究。 A new type of radiation-hardened Push-Pull pFLASH switch cell which includes two 2T- FLASH transistors (T1/T2) and a signal transmission PMOS transistor (T3) was designed and prepared based on 90 nm eFLASH process technology and its performance was studied.
12225 该结构由2个2T-FLASH管(匚⑴)和1个信号传输PMOS管 (T3)组成，采用带带隧穿(BTBT)编程方式和福勒ー诺德海姆(FN)擦除方式实现其“开/ 关”态功能。 The on/off states function was realized by using the band-to-band tunneling (BTBT) programming mode and Fowler-Nordheim (FN) erasing mode.
12226 同时，对其“开/关”态特性进行表征，研究其耐久性和电荷保持特性，最后，对 其抗总剂量(TID)能力进行评估。 Meanwhile，the “on/off( states characteristics were characterized to study the endurance and retention of the pFLASH switch cell device. Finally， its resistance to total ionizing dose (TID) ability was evaluated.
12227 实验结果表明：该器件的“L编程-T2擦除”与“L擦除- T2编程”态均可以实现信号传输管的“开/关”态功能，其阈值窗口的均值约为10.5 V; The experimental results show that “T1_PGM-T2—ERS( and “T1_ERS-T2_ PGM ( states of the device can achieve the on/off states function of the signal transmission transistor.
12228 在工作电压为-1.2V条件下，Th管的“开”态驱动电流均值约为0.92 mA “关”态漏电流低于 40 pA，且均表现出了良好的一致性。 The average threshold windows of T[/T, transistors are approximately 10. 5 V. Under -1.2 V working voltage，the average driving current of the T3 transistor at on state is about 0. 92 mA，and the leakage current of T3 at “off state is below 40 pA，which shows a good uniformity.
12229 同时，该器件的循环擦/写次数可达10 000次，在25 m的 “开/关”态应力条件下寿命大于10年，抗总剂量能力可达150 krad (Si)以上。 Meanwhile，the erasing/writing cycles of the device can reach 10 000. The lifetime of the device is more than 10 years under the on/off
12230 研制了一款基于InGaAs/GaAsP应变补偿量子阱结构的1 060 nm单横模半导体激光器,并采用金属有机物化学气相沉积（MOCVD）方法实现了外延生长。 A 1 060 nm single lateral mode semiconductor laser with InGaAs / GaAsP strain compensated quantum well structure was fabricated and the epitaxial growth was achieved by metal organic chemical vapor deposition ( MOCVD) .
12231 使用张应变的GaAsP势垒层对量子阱的应变进行补偿,并优化了 MOCVD外延生长条件。 The strain of the quantum well was compensated by using a tensile strain GaAsP barrier layer, and the epitaxial growth conditions of the MOCVD were optimized.
12232 所制备的单横模激光器的脊宽为4呻，腔长为2 mm, 25 m时测得其阈值电流为23 mA，最大斜率效率为1 W/A,直流电流为 500 mA时光功率为437 mW。 The ridge waveguide laser with 4 |xm width and 2 mm cavity length exhibits threshold current of 23 mA, maximum slope efficiency of 1 W/A at 25 °C, and a light power of 437 mW under CW driver current of 500 mA. The maximum output power of the device under pulse driver is up to 1. 2 W without abrupt failure related to catastrophic optical mirror damage.
12233 脉冲驱动时,器件最高输出功率达到1.2W,并未发生腔面光学灾 变损伤失效。器件快慢轴发散角分别为46.3。和7.4。时，器件的输出功率为270 mW。 The fast and slow axes divergence angles of the device are 46. 3。 and 7. 4。,respectively, and the output power of the device is 270 mW at 65 C.