ID 原文 译文
12214 近年来, 碳纳米管 (CNTs) 因其独特的结构和卓越的电学性能, 在后摩尔定律时代成为了集成电路器件领域的研究热点。 In recent years, carbon nanotubes ( CNTs) have become a research hotspot in the field of integrated circuit in the post-Moore 's law age due to their unique structures and excellent electronic performances.
12215 针对新型CNTs放大器的检测应用, 设计了一款完整的放大、模数转换读出电路芯片。 A complete amplification and analog-to-digital conversion readout circuit chip was designed for the detection application of new CNTs amplifiers.
12216 读出电路主要由可编程增益放大器和8 bit/20 MHz流水线模数转换器等组成, 采用SMIC 0.18μm 1P6M混合信号工艺实现, 电路芯片面积为1.9 mm×1.7 mm。 The readout circuit composed of a programmable gain amplifier and an 8 bit/20 MHz pip elined analog-to-digital converter was implemented in SMIC0. 18 μm 1 P6 M mixed-signal process with the chip area of 1. 9 mm ×1. 7 mm.
12217 测试结果表明, 在电源电压3.3 V、信号带宽1 MHz内, 其典型输出信噪失真比达45.3 dB, 有效位数 (ENOB) 达7.23 bit, 具有良好的输出动态范围和检测灵敏度。 The test results show that the typical output signal-to-noise and distortion ratio is 45. 3 d B and the effective number of bits is7. 23 bit in 3. 3 V power supply voltage and 1 MHz signal bandwidth, while maintaining excellent output dynamic range and detection sensitivity.
12218 基于 CSMC 0. 18 μm 工艺，设计了一款全 CMOS 结构的带隙基准源电路。 An all-CMOS-structure band-gap reference circuit based on CSMC 0. 18 |xm process was designed.
12219 电路正常工作时，所有 MOS 管均处于亚阈工作状态，从而保证了整个带隙基准电路芯片具有极低的功耗。 When the circuit was working normally，all MOSFETs of the proposed circuit were in the subthreshold working status， thus ensuing extremely low power consumption of the bandgap reference circuit chip.
12220 在电压输出方面，通过分压降低负温度系数 ( CTAT) 电压同时降低相应的正温度系数 ( PTAT)电压，使输出电压小于 1 V。 In terms of the voltage output， the complementary proportional to absolute temperature (CTAT) voltage was reduced by dividing the voltage while lowering the corresponding proportional to the absolute temperature ( PTAT) voltage，so that the output voltage was less than 1 V.
12221 在温度系数方面，通过对 CTAT 电压进行分压降低负温度系数，配合级联 PTAT 电路，使温度系数能够精确可调。再经由 PTAT 电压调整管，极大改善了输出温度特性，得到较低的温度系数。 In terms of the temperature coefficient，the negative temperature coefficient was reduced by dividing the CTAT，and the cascaded PTAT circuit was coordinated to make the temperature coefficient accurately adjustable.
12222 后仿真结果表明该基准输出电压为 495 mV，整体工作电流仅为8 nA，温度系数为 4. 86×10－6，工作温度为－50 ～ 150 ℃。 The post-simulation results show that the output reference voltage of the bandgap reference is 495 mV，the overall operating current is only 8 nA，the temperature coefficient is 4. 86x10 ，and the operating temperature range is -50 -150 C .
12223 该设计应用于低压差线性稳压器芯片中，芯片测试结果表明其性能良好。 The design was applied to a low dropout linear regulator chip，and the chip test results show that its performance is good.